MOSFET | 高周波MOSFET|パッケージ : SMQ (表面実装)
| 型番 | 3SK226 |
|---|---|
| メーカー | TOSHIBA |
| 種別 | 高周波MOSFET |
| データシート | ![]() |
| Case Connection | SOURCE |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 13.5 V |
| Drain Current-Max (ID) | 0.03 A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 0.03 pF |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND |
| JESD-30 Code | R-PDSO-G4 |
| JESD-609 Code | e0 |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Operating Mode | DUAL GATE, DEPLETION MODE |
| Operating Temperature-Max | 125 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE Meter |
| Peak Reflow Temperature (Cel) | 240 |
| Polarity/Channel Type | N-CHANNEL |
| Power Gain-Min (Gp) | 23 dB |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| 会社名称 | 株式会社東芝 |
|---|---|
| 設立 | 1875年7月 |
| 資本金 | 4,399億円 |
| 所在地 | 東京都港区芝浦1-1-1 |
| URL | http://www.semicon.toshiba.co.jp/eng/ |
3SK226 - TOSHIBA の商品詳細ページです。