| 型番 | UPA2352T1G-E4-A |
|---|
| メーカー | RENESAS |
|---|
| データシート |  |
| Configuration |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code |
S-PBGA-X4 |
| JESD-609 Code |
e6 |
| Number of Elements |
2 |
| Number of Terminals |
4 |
| Operating Mode |
ENHANCEMENT MODE |
| Operating Temperature-Max |
150 Cel |
| Package Body Material |
PLASTIC/EPOXY |
| Package Shape |
SQUARE |
| Package Style |
GRID ARRAY Meter |
| Polarity/Channel Type |
N-CHANNEL |
| Power Dissipation-Max (Abs) |
0.75 W |
| Qualification Status |
Not Qualified |
| Sub Category |
FET General Purpose Power |
| Surface Mount |
YES |
| Terminal Finish |
TIN BISMUTH |
| Terminal Form |
UNSPECIFIED |
| Terminal Position |
BOTTOM |
| Transistor Element Material |
SILICON |
UPA2352T1G-E4-A - RENESAS の商品詳細ページです。