| 型番 | TPCP8J01 |
|---|---|
| メーカー | TOSHIBA |
| 種別 | パワーMOSFET |
| データシート | ![]() |
| Avalanche Energy Rating (Eas) | 5.8 mJ |
| Collector Current-Max (IC) | 0.1 A |
| Configuration | SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR |
| DC Current Gain-Min (hFE) | 80 |
| DS Breakdown Voltage-Min | 32 V |
| Drain Current-Max (ID) | 5.5 A |
| Drain-source On Resistance-Max | 0.049 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-F8 |
| Number of Elements | 1 |
| Number of Terminals | 8 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE Meter |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | P-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 22 A |
| Qualification Status | Not Qualified |
| Sub Category | Other Transistors |
| Surface Mount | YES |
| Terminal Form | FLAT |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| VCEsat-Max | 0.3 V |
| 会社名称 | 株式会社東芝 |
|---|---|
| 設立 | 1875年7月 |
| 資本金 | 4,399億円 |
| 所在地 | 東京都港区芝浦1-1-1 |
| URL | http://www.semicon.toshiba.co.jp/eng/ |
TPCP8J01 - TOSHIBA の商品詳細ページです。