| 型番 | TPCP8207 |
|---|
| メーカー | TOSHIBA |
|---|
| カテゴリ | FET |
|---|
| 種別 | パワーMOSFET |
|---|
| データシート |  |
| Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min |
40 V |
| Drain Current-Max (Abs) (ID) |
5 A |
| Drain Current-Max (ID) |
5 A |
| Drain-source On Resistance-Max |
0.0628 ohm |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| ID(A) |
5 |
| JESD-30 Code |
R-PDSO-F8 |
| Mold |
ハロゲンフリー |
| Number of Elements |
2 |
| Number of Terminals |
8 |
| Operating Mode |
ENHANCEMENT MODE |
| Operating Temperature-Max |
150 Cel |
| Package Body Material |
PLASTIC/EPOXY |
| Package Shape |
RECTANGULAR |
| Package Style |
SMALL OUTLINE Meter |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Polarity/Channel Type |
N-CHANNEL |
| Power Dissipation-Max (Abs) |
1.77 W |
| Qg(nC) |
11.8 |
| RDS(ON)Max(Ω)|VGS|=1.2V |
|
| RDS(ON)Max(Ω)|VGS|=10V |
|
| RDS(ON)Max(Ω)|VGS|=2.5V |
|
| RDS(ON)Max(Ω)|VGS|=4.5V |
|
| Reference Standard |
AEC-Q101 |
| RoHS |
RoHS compatible |
| Sub Category |
FET General Purpose Power |
| Surface Mount |
YES |
| Tch(℃) |
175 |
| Terminal Form |
FLAT |
| Terminal Position |
DUAL |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Transistor Application |
SWITCHING |
| Transistor Element Material |
SILICON |
| VDSS(V) |
40 |
| タイプ |
|
| 極性 |
N-ch x 2 |
| 駆動電圧タイプ |
10Vゲート駆動 |
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