| 型番 | TPC8227-H |
|---|
| メーカー | TOSHIBA |
|---|
| カテゴリ | MOSFET |
|---|
| データシート |  |
| Ciss(pF) |
640 |
| Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min |
40 V |
| Drain Current-Max (Abs) (ID) |
5.1 A |
| Drain Current-Max (ID) |
5.1 A |
| Drain-source On Resistance-Max |
0.04 ohm |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| ID(A) |
5.1 |
| JESD-30 Code |
R-PDSO-G8 |
| Number of Elements |
2 |
| Number of Terminals |
8 |
| Operating Mode |
ENHANCEMENT MODE |
| Operating Temperature-Max |
150 Cel |
| PD(W) |
1.5 |
| Package Body Material |
PLASTIC/EPOXY |
| Package Shape |
RECTANGULAR |
| Package Style |
SMALL OUTLINE Meter |
| Polarity/Channel Type |
N-CHANNEL |
| Power Dissipation-Max (Abs) |
1.5 W |
| Qg(nC) |
10 |
| RDS(ON)Max(Ω)|VGS|=1.2V |
|
| RDS(ON)Max(Ω)|VGS|=1.5V |
|
| RDS(ON)Max(Ω)|VGS|=1.8V |
|
| RDS(ON)Max(Ω)|VGS|=10V |
|
| RDS(ON)Max(Ω)|VGS|=2.5V |
|
| RDS(ON)Max(Ω)|VGS|=4.5V |
|
| RDS(ON)Max(Ω)|VGS|=4V |
|
| RDS(ON)Max(Ω)|VGS|=6V |
|
| Sub Category |
FET General Purpose Power |
| Surface Mount |
YES |
| Terminal Form |
GULL WING |
| Terminal Position |
DUAL |
| Transistor Application |
SWITCHING |
| Transistor Element Material |
SILICON |
| VDSS(V) |
40 |
| VGSS(V) |
|
| タイプ |
高速スイッチング |
| ピン数 |
8 |
| 世代 |
U-MOSⅥ-H |
| 極性 |
N-ch x 2 |
| 面実装区分 |
Y |
| 駆動電圧タイプ |
|
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