TK39A60W データシート

Name: TK39A60W
Brand: TOSHIBA
SKU: 300376785-0000-0000-0000

TK39A60W - TOSHIBA の商品詳細ページです。

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TK39A60W の詳細情報

型番	TK39A60W
メーカー	TOSHIBA
カテゴリ	MOSFET
種別	パワーMOSFET
データシート
Avalanche Energy Rating (Eas)	608 mJ
Case Connection	ISOLATED
Ciss(pF)	4100
Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	600 V
Drain Current-Max (Abs) (ID)	38.8 A
Drain Current-Max (ID)	38.8 A
Drain-source On Resistance-Max	0.065 ohm
FET Technology	METAL-OXIDE SEMICONDUCTOR
ID(A)	38.8
JEDEC-95 Code	TO-220AB
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Number of Terminals	3
Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 Cel
PD(W)	50
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	FLANGE MOUNT Meter
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	50 W
Pulsed Drain Current-Max (IDM)	155 A
Qg(nC)	110
RDS(ON)Max(Ω)\|VGS\|=1.2V
RDS(ON)Max(Ω)\|VGS\|=1.5V
RDS(ON)Max(Ω)\|VGS\|=1.8V
RDS(ON)Max(Ω)\|VGS\|=10V	0.065
RDS(ON)Max(Ω)\|VGS\|=2.5V
RDS(ON)Max(Ω)\|VGS\|=4.5V
RDS(ON)Max(Ω)\|VGS\|=4V
RDS(ON)Max(Ω)\|VGS\|=6V
Sub Category	FET General Purpose Power
Surface Mount	NO
Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Transistor Application	SWITCHING
Transistor Element Material	SILICON
VDSS(V)	600
VGSS(V)	+/-30
タイプ
ピン数	3
世代	DTMOSⅣ
極性	N-ch
面実装区分	N
駆動電圧タイプ	10Vゲート駆動