| 型番 | TK16V60W |
|---|
| メーカー | TOSHIBA |
|---|
| カテゴリ | MOSFET |
|---|
| 種別 | パワーMOSFET |
|---|
| データシート |  |
| Avalanche Energy Rating (Eas) |
179 mJ |
| Case Connection |
DRAIN |
| Ciss(pF) |
1350 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min |
600 V |
| Drain Current-Max (Abs) (ID) |
15.8 A |
| Drain Current-Max (ID) |
15.8 A |
| Drain-source On Resistance-Max |
0.19 ohm |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| ID(A) |
15.8 |
| JESD-30 Code |
S-PSSO-N4 |
| Number of Elements |
1 |
| Number of Terminals |
4 |
| Operating Mode |
ENHANCEMENT MODE |
| Operating Temperature-Max |
150 Cel |
| PD(W) |
139 |
| Package Body Material |
PLASTIC/EPOXY |
| Package Shape |
SQUARE |
| Package Style |
SMALL OUTLINE Meter |
| Polarity/Channel Type |
N-CHANNEL |
| Power Dissipation-Max (Abs) |
139 W |
| Pulsed Drain Current-Max (IDM) |
63.2 A |
| Qg(nC) |
38 |
| RDS(ON)Max(Ω)|VGS|=1.2V |
|
| RDS(ON)Max(Ω)|VGS|=1.5V |
|
| RDS(ON)Max(Ω)|VGS|=1.8V |
|
| RDS(ON)Max(Ω)|VGS|=10V |
0.19 |
| RDS(ON)Max(Ω)|VGS|=2.5V |
|
| RDS(ON)Max(Ω)|VGS|=4.5V |
|
| RDS(ON)Max(Ω)|VGS|=4V |
|
| RDS(ON)Max(Ω)|VGS|=6V |
|
| Sub Category |
FET General Purpose Power |
| Surface Mount |
YES |
| Terminal Form |
NO LEAD |
| Terminal Position |
SINGLE |
| Transistor Application |
SWITCHING |
| Transistor Element Material |
SILICON |
| VDSS(V) |
600 |
| VGSS(V) |
+/-30 |
| タイプ |
|
| ピン数 |
5 |
| 世代 |
DTMOSⅣ |
| 極性 |
N-ch |
| 面実装区分 |
Y |
| 駆動電圧タイプ |
10Vゲート駆動 |
TK16V60W - TOSHIBA の商品詳細ページです。