| 型番 | TK13A60D |
|---|---|
| メーカー | TOSHIBA |
| カテゴリ | MOSFET |
| 種別 | パワーMOSFET |
| データシート | ![]() |
| Avalanche Energy Rating (Eas) | 511 mJ |
| Case Connection | ISOLATED |
| Ciss(pF) | 2300 |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 600 V |
| Drain Current-Max (Abs) (ID) | 13 A |
| Drain Current-Max (ID) | 13 A |
| Drain-source On Resistance-Max | 0.43 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| ID(A) | 13 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 Cel |
| PD(W) | 50 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT Meter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 50 W |
| Pulsed Drain Current-Max (IDM) | 52 A |
| Qg(nC) | 40 |
| Qualification Status | Not Qualified |
| RDS(ON)Max(Ω)|VGS|=1.2V | |
| RDS(ON)Max(Ω)|VGS|=1.5V | |
| RDS(ON)Max(Ω)|VGS|=1.8V | |
| RDS(ON)Max(Ω)|VGS|=10V | 0.43 |
| RDS(ON)Max(Ω)|VGS|=2.5V | |
| RDS(ON)Max(Ω)|VGS|=4.5V | |
| RDS(ON)Max(Ω)|VGS|=4V | |
| RDS(ON)Max(Ω)|VGS|=6V | |
| Sub Category | FET General Purpose Power |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| VDSS(V) | 600 |
| VGSS(V) | +/-30 |
| タイプ | |
| ピン数 | 3 |
| 世代 | π-MOSⅦ |
| 極性 | N-ch |
| 面実装区分 | N |
| 駆動電圧タイプ | 10Vゲート駆動 |
| 会社名称 | 株式会社東芝 |
|---|---|
| 設立 | 1875年7月 |
| 資本金 | 4,399億円 |
| 所在地 | 東京都港区芝浦1-1-1 |
| URL | http://www.semicon.toshiba.co.jp/eng/ |
TK13A60D - TOSHIBA の商品詳細ページです。