| 型番 | TK11A50D |
|---|
| メーカー | TOSHIBA |
|---|
| カテゴリ | MOSFET |
|---|
| 種別 | パワーMOSFET |
|---|
| データシート |  |
| Avalanche Energy Rating (Eas) |
264 mJ |
| Case Connection |
ISOLATED |
| Ciss(pF) |
1200 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min |
500 V |
| Drain Current-Max (Abs) (ID) |
11 A |
| Drain Current-Max (ID) |
11 A |
| Drain-source On Resistance-Max |
0.6 ohm |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| ID(A) |
11 |
| JESD-30 Code |
R-PSFM-T3 |
| Number of Elements |
1 |
| Number of Terminals |
3 |
| Operating Mode |
ENHANCEMENT MODE |
| Operating Temperature-Max |
150 Cel |
| PD(W) |
45 |
| Package Body Material |
PLASTIC/EPOXY |
| Package Shape |
RECTANGULAR |
| Package Style |
FLANGE MOUNT Meter |
| Polarity/Channel Type |
N-CHANNEL |
| Power Dissipation-Max (Abs) |
45 W |
| Pulsed Drain Current-Max (IDM) |
44 A |
| Qg(nC) |
24 |
| Qualification Status |
Not Qualified |
| RDS(ON)Max(Ω)|VGS|=1.2V |
|
| RDS(ON)Max(Ω)|VGS|=1.5V |
|
| RDS(ON)Max(Ω)|VGS|=1.8V |
|
| RDS(ON)Max(Ω)|VGS|=10V |
0.6 |
| RDS(ON)Max(Ω)|VGS|=2.5V |
|
| RDS(ON)Max(Ω)|VGS|=4.5V |
|
| RDS(ON)Max(Ω)|VGS|=4V |
|
| RDS(ON)Max(Ω)|VGS|=6V |
|
| Sub Category |
FET General Purpose Power |
| Surface Mount |
NO |
| Terminal Form |
THROUGH-HOLE |
| Terminal Position |
SINGLE |
| Transistor Application |
SWITCHING |
| Transistor Element Material |
SILICON |
| VDSS(V) |
500 |
| VGSS(V) |
+/-30 |
| タイプ |
|
| ピン数 |
3 |
| 世代 |
π-MOSⅦ |
| 極性 |
N-ch |
| 面実装区分 |
N |
| 駆動電圧タイプ |
10Vゲート駆動 |
TK11A50D - TOSHIBA の商品詳細ページです。