TJ8S06M3L(T6L1,NQ)

Name: TJ8S06M3L(T6L1,NQ)
Brand: TOSHIBA
SKU: 300367249-0000-0000-0000

TJ8S06M3L(T6L1,NQ) - TOSHIBA の商品詳細ページです。

２営業日以内に回答いたします

T6:紙テープ仕様 L1:16mm幅テーピング N:受光チップ姫路工場生産 Q:端子のみ鉛,ハロゲンフリー品

TJ8S06M3L(T6L1,NQ) の詳細情報

型番	TJ8S06M3L(T6L1,NQ)
メーカー	TOSHIBA
種別	パワーMOSFET
Avalanche Energy Rating (Eas)	19 mJ
Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	60 V
Drain Current-Max (Abs) (ID)	8 A
Drain Current-Max (ID)	8 A
Drain-source On Resistance-Max	0.13 ohm
FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Terminals	2
Operating Mode	ENHANCEMENT MODE
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	SMALL OUTLINE Meter
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Polarity/Channel Type	P-CHANNEL
Power Dissipation-Max (Abs)	27 W
Pulsed Drain Current-Max (IDM)	16 A
Reference Standard	AEC-Q101
Surface Mount	YES
Terminal Form	GULL WING
Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Transistor Application	SWITCHING
Transistor Element Material	SILICON