型番 | TC59LM806BFT-30 |
---|---|
メーカー | TOSHIBA |
データシート | ![]() |
Access Mode | FOUR BANK PAGE BURST |
Access Time-Max | 1 ns |
Additional Feature | AUTO/SELF REFRESH |
Clock Frequency-Max (fCLK) | 133 MHz |
I/O Type | COMMON |
Interleaved Burst Length | 2,4 |
JESD-30 Code | R-PDSO-G66 |
JESD-609 Code | e0 |
Length | 22.22 mm |
Memory Density | 268435456 bit |
Memory IC Type | DDR1 DRAM |
Memory Width | 8 |
Number of Functions | 1 |
Number of Ports | 1 |
Number of Terminals | 66 |
Number of Words | 33554432 words |
Number of Words Code | 32M |
Operating Mode | SYNCHRONOUS |
Operating Temperature-Max | 70 Cel |
Operating Temperature-Min | 0 Cel |
Organization | 32MX8 |
Output Characteristics | 3-STATE |
Package Body Material | PLASTIC/EPOXY |
Package Code | TSOP2 |
Package Equivalence Code | TSSOP66,.46 |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE, THIN PROFILE Meter |
Peak Reflow Temperature (Cel) | 240 |
Power Supplies | 2.5 V |
Qualification Status | Not Qualified |
Seated Height-Max | 1.2 mm |
Self Refresh | YES |
Sequential Burst Length | 2,4 |
Standby Current-Max | 0.002 Amp |
Sub Category | DRAMs |
Supply Current-Max | 0.15 mA |
Supply Voltage-Max (Vsup) | 2.7 V |
Supply Voltage-Min (Vsup) | 2.3 V |
Supply Voltage-Nom (Vsup) | 2.5 V |
Surface Mount | YES |
Technology | CMOS |
Temperature Grade | COMMERCIAL |
Terminal Finish | Tin/Lead (Sn/Pb) |
Terminal Form | GULL WING |
Terminal Pitch | 0.65 mm |
Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Width | 10.16 mm |
会社名称 | 株式会社東芝 |
---|---|
設立 | 1875年7月 |
資本金 | 4,399億円 |
所在地 | 東京都港区芝浦1-1-1 |
URL | http://www.semicon.toshiba.co.jp/eng/ |
TC59LM806BFT-30 - TOSHIBA の商品詳細ページです。