TC58NYG0S3EBAI4 データシート

Name: TC58NYG0S3EBAI4
Brand: TOSHIBA
SKU: 300315174-0000-0000-0000

TC58NYG0S3EBAI4 - TOSHIBA の商品詳細ページです。

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NAND型フラッシュメモリ | SLC | NAND

TC58NYG0S3EBAI4 の詳細情報

型番	TC58NYG0S3EBAI4
メーカー	TOSHIBA
種別	NAND型フラッシュメモリ
データシート
Access Time-Max	25 ns
Command User Interface	YES
Data Polling	NO
JESD-30 Code	R-PBGA-B63
Length	11 mm
Memory Density	1073741824 bit
Memory IC Type	FLASH
Memory Width	8
Number of Functions	1
Number of Sectors/Size	1K
Number of Terminals	63
Number of Words	134217728 words
Number of Words Code	128M
Operating Mode	ASYNCHRONOUS
Operating Temperature-Max	85 Cel
Operating Temperature-Min	-40 Cel
Organization	128MX8
Package Body Material	PLASTIC/EPOXY
Package Code	VFBGA
Package Equivalence Code	BGA63,10X12,32
Package Shape	RECTANGULAR
Package Style	GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
Page Size	2K words
Parallel/Serial	SERIAL
Power Supplies	1.8 V
Programming Voltage	1.8 V
Qualification Status	Not Qualified
Ready/Busy	YES
Seated Height-Max	1 mm
Sector Size	128K Words
Standby Current-Max	5.0E-5 Amp
Sub Category	Flash Memories
Supply Current-Max	0.03 mA
Supply Voltage-Max (Vsup)	1.95 V
Supply Voltage-Min (Vsup)	1.7 V
Supply Voltage-Nom (Vsup)	1.8 V
Surface Mount	YES
Technology	CMOS
Temperature Grade	INDUSTRIAL
Terminal Form	BALL
Terminal Pitch	0.8 mm
Terminal Position	BOTTOM
Toggle Bit	NO
Width	9 mm