| 型番 | TC58FVT641XB-70 |
|---|---|
| メーカー | TOSHIBA |
| 種別 | NAND型フラッシュメモリ |
| データシート | ![]() |
| Access Time-Max | 80 ns |
| Alternate Memory Width | 8 |
| Boot Block | TOP |
| Command User Interface | YES |
| Common Flash Interface | YES |
| Data Polling | YES |
| JESD-30 Code | R-PBGA-B63 |
| Length | 11 mm |
| Memory Density | 67108864 bit |
| Memory IC Type | FLASH |
| Memory Width | 16 |
| Number of Functions | 1 |
| Number of Sectors/Size | 8,127 |
| Number of Terminals | 63 |
| Number of Words | 4194304 words |
| Number of Words Code | 4M |
| Operating Mode | ASYNCHRONOUS |
| Operating Temperature-Max | 85 Cel |
| Operating Temperature-Min | -40 Cel |
| Organization | 4MX16 |
| Package Body Material | PLASTIC/EPOXY |
| Package Code | TFBGA |
| Package Equivalence Code | BGA63,8X12,32 |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH Meter |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Power Supplies | 3/3.3 V |
| Programming Voltage | 3 V |
| Qualification Status | Not Qualified |
| Ready/Busy | YES |
| Seated Height-Max | 1.2 mm |
| Sector Size | 8K,64K Words |
| Standby Current-Max | 1.0E-5 Amp |
| Sub Category | Flash Memories |
| Supply Current-Max | 0.045 mA |
| Supply Voltage-Max (Vsup) | 3.6 V |
| Supply Voltage-Min (Vsup) | 2.7 V |
| Supply Voltage-Nom (Vsup) | 3 V |
| Surface Mount | YES |
| Technology | CMOS |
| Temperature Grade | INDUSTRIAL |
| Terminal Form | BALL |
| Terminal Pitch | 0.8 mm |
| Terminal Position | BOTTOM |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Toggle Bit | YES |
| Type | NOR TYPE |
| Width | 9 mm |
| 会社名称 | 株式会社東芝 |
|---|---|
| 設立 | 1875年7月 |
| 資本金 | 4,399億円 |
| 所在地 | 東京都港区芝浦1-1-1 |
| URL | http://www.semicon.toshiba.co.jp/eng/ |
TC58FVT641XB-70 - TOSHIBA の商品詳細ページです。