 
  
| 型番 | SSM6E01TU | 
|---|---|
| メーカー | TOSHIBA | 
| カテゴリ | その他-トランジスタ | 
| 種別 | 小信号MOSFET | 
| データシート |  | 
| (Q1)IC (Max)(A) | |
| (Q1)ID (Max)(A) | -1 | 
| (Q1)VCEO (Max)(V) | |
| (Q1)VDS (Max)(V) | -12 | 
| (Q1)VR (Max)(V) | |
| (Q2)IC (Max)(A) | |
| (Q2)ID (Max)(A) | 0.1 | 
| (Q2)VCEO (Max)(V) | |
| (Q2)VDS (Max)(V) | 20 | 
| (Q2)VR (Max)(V) | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | 
| DS Breakdown Voltage-Min | 20 V | 
| Drain Current-Max (ID) | 0.05 A | 
| Drain-source On Resistance-Max | 10 ohm | 
| FET Technology | METAL-OXIDE SEMICONDUCTOR | 
| JESD-30 Code | R-PDSO-F6 | 
| JESD-609 Code | e0 | 
| Number of Elements | 1 | 
| Number of Terminals | 6 | 
| Operating Mode | ENHANCEMENT MODE | 
| Package Body Material | PLASTIC/EPOXY | 
| Package Shape | RECTANGULAR | 
| Package Style | SMALL OUTLINE Meter | 
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | 
| Power Dissipation-Max (Abs) | 0.5 W | 
| Qualification Status | Not Qualified | 
| Sub Category | Other Transistors | 
| Surface Mount | YES | 
| Terminal Finish | TIN LEAD | 
| Terminal Form | FLAT | 
| Terminal Position | DUAL | 
| Transistor Application | SWITCHING | 
| Transistor Element Material | SILICON | 
| データシート | |
| ピン数 | 6 | 
| ライフサイクル | |
| 構成 | P-ch MOS + N-ch MOS | 
| 面実装区分 | Y | 
| 会社名称 | 株式会社東芝 | 
|---|---|
| 設立 | 1875年7月 | 
| 資本金 | 4,399億円 | 
| 所在地 | 東京都港区芝浦1-1-1 | 
| URL | http://www.semicon.toshiba.co.jp/eng/ | 
SSM6E01TU - TOSHIBA の商品詳細ページです。