MG50J2YS50 データシート Toshiba

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MG50J2YS50 の詳細情報

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型番MG50J2YS50
メーカーTOSHIBA
データシートProduct_list_pdf
Additional Feature HIGH SPEED
Case Connection ISOLATED
Collector Current-Max (IC) 50 A
Collector-emitter Voltage-Max 600 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Fall Time-Max (tf) 300 ns
Gate-emitter Thr Voltage-Max 8 V
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 150 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 280 W
Power Dissipation-Max (Abs) 280 W
Qualification Status Not Qualified
Rise Time-Max (tr) 240 ns
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Max (toff) 400 ns
Turn-off Time-Nom (toff) 200 ns
Turn-on Time-Max (ton) 160 ns
Turn-on Time-Nom (ton) 80 ns
VCEsat-Max 2.7 V
会社名称株式会社東芝
設立1875年7月
資本金4,399億円
所在地東京都港区芝浦1-1-1
URLhttp://www.semicon.toshiba.co.jp/eng/

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