型番 | MG100J1ZS40 |
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メーカー | TOSHIBA |
データシート | ![]() |
Additional Feature | HIGH SPEED |
Case Connection | ISOLATED |
Collector Current-Max (IC) | 100 A |
Collector-emitter Voltage-Max | 600 V |
Configuration | SINGLE WITH BUILT-IN DIODE |
Fall Time-Max (tf) | 350 ns |
Gate-emitter Thr Voltage-Max | 6 V |
Gate-emitter Voltage-Max | 20 V |
JESD-30 Code | R-XUFM-X5 |
Number of Elements | 1 |
Number of Terminals | 5 |
Operating Temperature-Max | 150 Cel |
Package Body Material | UNSPECIFIED |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT Meter |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation Ambient-Max | 400 W |
Power Dissipation-Max (Abs) | 400 W |
Qualification Status | Not Qualified |
Rise Time-Max (tr) | 600 ns |
Sub Category | Insulated Gate BIP Transistors |
Surface Mount | NO |
Terminal Form | UNSPECIFIED |
Terminal Position | UPPER |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | MOTOR CONTROL |
Transistor Element Material | SILICON |
VCEsat-Max | 3.5 V |
会社名称 | 株式会社東芝 |
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設立 | 1875年7月 |
資本金 | 4,399億円 |
所在地 | 東京都港区芝浦1-1-1 |
URL | http://www.semicon.toshiba.co.jp/eng/ |
MG100J1ZS40 - TOSHIBA の商品詳細ページです。