GT60M303 データシート

Name: GT60M303
Brand: TOSHIBA
SKU: 170038154-0000-0000-0000

GT60M303 - TOSHIBA の商品詳細ページです。

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バイポーラトランジスタ | IGBT

GT60M303 の詳細情報

型番	GT60M303
メーカー	TOSHIBA
種別	バイポーラトランジスタ
データシート
Additional Feature	HIGH SPEED
Case Connection	COLLECTOR
Collector Current-Max (IC)	60 A
Collector-emitter Voltage-Max	900 V
Configuration	SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf)	400 ns
Gate-emitter Thr Voltage-Max	6 V
Gate-emitter Voltage-Max	25 V
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Number of Terminals	3
Operating Temperature-Max	150 Cel
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	FLANGE MOUNT Meter
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Polarity/Channel Type	N-CHANNEL
Power Dissipation Ambient-Max	170 W
Power Dissipation-Max (Abs)	170 W
Qualification Status	Not Qualified
Rise Time-Max (tr)	600 ns
Sub Category	Insulated Gate BIP Transistors
Surface Mount	NO
Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Transistor Application	POWER CONTROL
Transistor Element Material	SILICON
Turn-off Time-Nom (toff)	600 ns
Turn-on Time-Nom (ton)	460 ns
VCEsat-Max	2.7 V