バイポーラトランジスタ | IGBT
| 型番 | GT30J322 |
|---|---|
| メーカー | TOSHIBA |
| 種別 | バイポーラトランジスタ |
| データシート | ![]() |
| Additional Feature | HIGH SPEED |
| Collector Current-Max (IC) | 30 A |
| Collector-emitter Voltage-Max | 600 V |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Fall Time-Max (tf) | 400 ns |
| Gate-emitter Voltage-Max | 20 V |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e0 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Temperature-Max | 150 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT Meter |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 75 W |
| Qualification Status | Not Qualified |
| Sub Category | Insulated Gate BIP Transistors |
| Surface Mount | NO |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | POWER CONTROL |
| Transistor Element Material | SILICON |
| Turn-off Time-Nom (toff) | 400 ns |
| Turn-on Time-Nom (ton) | 300 ns |
| 会社名称 | 株式会社東芝 |
|---|---|
| 設立 | 1875年7月 |
| 資本金 | 4,399億円 |
| 所在地 | 東京都港区芝浦1-1-1 |
| URL | http://www.semicon.toshiba.co.jp/eng/ |
GT30J322 - TOSHIBA の商品詳細ページです。