型番 | GT25J101 |
---|---|
メーカー | TOSHIBA |
種別 | バイポーラトランジスタ |
データシート | ![]() |
Additional Feature | HIGH SPEED |
Case Connection | COLLECTOR |
Collector Current-Max (IC) | 25 A |
Collector-emitter Voltage-Max | 600 V |
Configuration | SINGLE |
Fall Time-Max (tf) | 350 ns |
Gate-emitter Thr Voltage-Max | 6 V |
Gate-emitter Voltage-Max | 20 V |
JESD-30 Code | R-PSFM-T3 |
JESD-609 Code | e0 |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Temperature-Max | 150 Cel |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT Meter |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation Ambient-Max | 150 W |
Power Dissipation-Max (Abs) | 150 W |
Qualification Status | Not Qualified |
Rise Time-Max (tr) | 600 ns |
Sub Category | Insulated Gate BIP Transistors |
Surface Mount | NO |
Terminal Finish | Tin/Lead (Sn/Pb) |
Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE |
Transistor Application | MOTOR CONTROL |
Transistor Element Material | SILICON |
Turn-off Time-Nom (toff) | 500 ns |
Turn-on Time-Nom (ton) | 400 ns |
VCEsat-Max | 4 V |
会社名称 | 株式会社東芝 |
---|---|
設立 | 1875年7月 |
資本金 | 4,399億円 |
所在地 | 東京都港区芝浦1-1-1 |
URL | http://www.semicon.toshiba.co.jp/eng/ |
GT25J101 - TOSHIBA の商品詳細ページです。