パッケージ : TO-220SIS
| 型番 | GT20G101 |
|---|---|
| メーカー | TOSHIBA |
| 種別 | バイポーラトランジスタ |
| データシート | ![]() |
| Case Connection | COLLECTOR |
| Collector Current-Max (IC) | 20 A |
| Collector-emitter Voltage-Max | 400 V |
| Configuration | SINGLE |
| Fall Time-Max (tf) | 6000 ns |
| Gate-emitter Thr Voltage-Max | 7 V |
| Gate-emitter Voltage-Max | 25 V |
| JESD-30 Code | R-PSIP-T3 |
| JESD-609 Code | e0 |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Operating Temperature-Max | 150 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | IN-LINE Meter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation Ambient-Max | 60 W |
| Power Dissipation-Max (Abs) | 60 W |
| Qualification Status | Not Qualified |
| Rise Time-Max (tr) | 500 ns |
| Sub Category | Insulated Gate BIP Transistors |
| Surface Mount | NO |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Transistor Application | GENERAL PURPOSE SWITCHING |
| Transistor Element Material | SILICON |
| VCEsat-Max | 8 V |
| 会社名称 | 株式会社東芝 |
|---|---|
| 設立 | 1875年7月 |
| 資本金 | 4,399億円 |
| 所在地 | 東京都港区芝浦1-1-1 |
| URL | http://www.semicon.toshiba.co.jp/eng/ |
GT20G101 - TOSHIBA の商品詳細ページです。