3SK291 データシート

Name: 3SK291
Brand: TOSHIBA
SKU: 40000738-0000-0000-0000

3SK291 - TOSHIBA の商品詳細ページです。

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MOSFET | 高周波MOSFET|パッケージ : SMQ (表面実装)

3SK291 の詳細情報

型番	3SK291
メーカー	TOSHIBA
カテゴリ	MOSFET
種別	高周波MOSFET
データシート
Additional Feature	LOW NOISE
Case Connection	SOURCE
Configuration	SINGLE
DS Breakdown Voltage-Min	12.5 V
Drain Current-Max (Abs) (ID)	0.03 A
Drain Current-Max (ID)	0.03 A
FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	0.04 pF
Highest Frequency Band	ULTRA HIGH FREQUENCY BAND
ID (Max)(A)	0.03
ID (Max)(A)@Tc=25degC
JESD-30 Code	R-PDSO-G4
Number of Elements	1
Number of Terminals	4
Operating Mode	DUAL GATE, DEPLETION MODE
Operating Temperature-Max	125 Cel
PD (Max)(W)	0.15
PD (Max)(W)@Tc=25degC
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	SMALL OUTLINE Meter
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	0.15 W
Power Gain-Min (Gp)	20 dB
Qualification Status	Not Qualified
Sub Category	FET General Purpose Power
Surface Mount	YES
Sパラメータ
Terminal Form	GULL WING
Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Transistor Application	AMPLIFIER
Transistor Element Material	SILICON
VDSS (Max)(V)@Tc=25degC
ピン数	4
用途	TV UHF高周波増幅用
面実装区分	Y