MOSFET | 高周波MOSFET|パッケージ : SMQ (表面実装)
型番 | 3SK127 |
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メーカー | TOSHIBA |
種別 | 高周波MOSFET |
データシート | ![]() |
Case Connection | SOURCE |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 15 V |
Drain Current-Max (Abs) (ID) | 0.03 A |
Drain Current-Max (ID) | 0.03 A |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 0.03 pF |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
JESD-30 Code | R-PDSO-G4 |
JESD-609 Code | e0 |
Number of Elements | 1 |
Number of Terminals | 4 |
Operating Mode | DUAL GATE, DEPLETION MODE |
Operating Temperature-Max | 125 Cel |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE Meter |
Peak Reflow Temperature (Cel) | 240 |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 0.15 W |
Qualification Status | Not Qualified |
Sub Category | FET General Purpose Power |
Surface Mount | YES |
Terminal Finish | TIN LEAD |
Terminal Form | GULL WING |
Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | AMPLIFIER |
Transistor Element Material | SILICON |
会社名称 | 株式会社東芝 |
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設立 | 1875年7月 |
資本金 | 4,399億円 |
所在地 | 東京都港区芝浦1-1-1 |
URL | http://www.semicon.toshiba.co.jp/eng/ |
3SK127 - TOSHIBA の商品詳細ページです。