2SK365
データシート
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MOSFET,接合形FET
2SK365 の詳細情報
- 仕様・詳細
- メーカー情報
| 型番 | 2SK365 |
|---|---|
| メーカー | TOSHIBA |
| 種別 | MOSFET,接合形FET |
| データシート |  |
| Additional Feature | LOW NOISE |
| Avalanche Energy Rating (Eas) | 122 mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 7.5 V |
| Drain Current-Max (Abs) (ID) | 2 A |
| Drain Current-Max (ID) | 0.01 A |
| Drain-source On Resistance-Max | 0.0099 ohm |
| FET Technology | JUNCTION |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PDSO-F3 |
| JESD-609 Code | e0 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Operating Mode | DEPLETION MODE |
| Operating Temperature-Max | 125 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT Meter |
| Peak Reflow Temperature (Cel) | 225 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 0.08 W |
| Pulsed Drain Current-Max (IDM) | 100 A |
| Qualification Status | Not Qualified |
| Sub Category | FET General Purpose Power |
| Surface Mount | NO |
| Terminal Finish | TIN LEAD |
| Terminal Form | FLAT |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| 会社名称 | 株式会社東芝 |
|---|---|
| 設立 | 1875年7月 |
| 資本金 | 4,399億円 |
| 所在地 | 東京都港区芝浦1-1-1 |
| URL | http://www.semicon.toshiba.co.jp/eng/ |
2SK365のレビュー
2SK365 のご注文について
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