2SK2952 - TOSHIBA の商品詳細ページです。

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MOSFET,接合形FET

2SK2952 の詳細情報

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  • メーカー情報
型番2SK2952
メーカーTOSHIBA
種別MOSFET,接合形FET
データシートProduct_list_pdf
Avalanche Energy Rating (Eas) 427 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 400 V
Drain Current-Max (Abs) (ID) 8.5 A
Drain Current-Max (ID) 8.5 A
Drain-source On Resistance-Max 0.55 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 40 W
Pulsed Drain Current-Max (IDM) 34 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称株式会社東芝
設立1875年7月
資本金4,399億円
所在地東京都港区芝浦1-1-1
URLhttp://www.semicon.toshiba.co.jp/eng/

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