MOSFET,接合形FET
型番 | 2SK2854 |
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メーカー | TOSHIBA |
カテゴリ | MOSFET |
種別 | MOSFET,接合形FET |
データシート | ![]() |
Case Connection | SOURCE |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 10 V |
Drain Current-Max (Abs) (ID) | 0.5 A |
Drain Current-Max (ID) | 0.5 A |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
ID (Max)(A) | 0.5 |
ID (Max)(A)@Tc=25degC | 0.5 |
JESD-30 Code | R-PSSO-F3 |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | DEPLETION MODE |
Operating Temperature-Max | 150 Cel |
PD (Max)(W) | 0.5 |
PD (Max)(W)@Tc=25degC | 0.5 |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE Meter |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 0.5 W |
Power Gain-Min (Gp) | 12.5 dB |
Qualification Status | Not Qualified |
Sub Category | FET General Purpose Power |
Surface Mount | YES |
Sパラメータ | S-parameter |
Terminal Form | FLAT |
Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | AMPLIFIER |
Transistor Element Material | SILICON |
VDSS (Max)(V)@Tc=25degC | 10 |
ピン数 | 3 |
用途 | 携帯電話用 (800MHz) |
面実装区分 | Y |
会社名称 | 株式会社東芝 |
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設立 | 1875年7月 |
資本金 | 4,399億円 |
所在地 | 東京都港区芝浦1-1-1 |
URL | http://www.semicon.toshiba.co.jp/eng/ |
2SK2854 - TOSHIBA の商品詳細ページです。