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2営業日以内に回答いたします

MOSFET,接合形FET

2SK246 の詳細情報

  • 仕様・詳細
  • メーカー情報
型番2SK246
メーカーTOSHIBA
種別MOSFET,接合形FET
データシートProduct_list_pdf
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 22.5 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (Abs) (ID) 2 A
Drain Current-Max (ID) 2 A
Drain-source On Resistance-Max 0.012 ohm
FET Technology JUNCTION
JEDEC-95 Code TO-92
JESD-30 Code O-PBCY-T3
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode DEPLETION MODE
Operating Temperature-Max 125 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style CYLINDRICAL Meter
Peak Reflow Temperature (Cel) 240
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 30 W
Power Dissipation-Max (Abs) 0.3 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form FLAT
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Turn-off Time-Max (toff) 70 ns
Turn-on Time-Max (ton) 45 ns
会社名称株式会社東芝
設立1875年7月
資本金4,399億円
所在地東京都港区芝浦1-1-1
URLhttp://www.semicon.toshiba.co.jp/eng/

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