MOSFET,接合形FET
| 型番 | 2SK2145 |
|---|---|
| メーカー | TOSHIBA |
| カテゴリ | FET |
| 種別 | MOSFET,接合形FET |
| データシート | ![]() |
| Additional Feature | LOW NOISE |
| Configuration | COMMON SOURCE, 2 ELEMENTS |
| FET Technology | JUNCTION |
| IDSS (Max)(mA) | 14 |
| IDSS (Min)(mA) | 1.2 |
| IG (Max)(mA) | 10 |
| JESD-30 Code | R-PDSO-G5 |
| JESD-609 Code | e0 |
| Number of Elements | 2 |
| Number of Terminals | 5 |
| Operating Mode | DEPLETION MODE |
| Operating Temperature-Max | 125 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE Meter |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 0.3 W |
| Qualification Status | Not Qualified |
| Sub Category | FET General Purpose Small Signal |
| Surface Mount | YES |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| VGDS (Max)(V) | -50 |
| |Yfs| (Min)(mS) | 4 |
| ピン数 | 5 |
| 極性 | N-ch x 2 |
| 面実装区分 | Y |
| 会社名称 | 株式会社東芝 |
|---|---|
| 設立 | 1875年7月 |
| 資本金 | 4,399億円 |
| 所在地 | 東京都港区芝浦1-1-1 |
| URL | http://www.semicon.toshiba.co.jp/eng/ |
2SK2145 - TOSHIBA の商品詳細ページです。