MOSFET,接合形FET
型番 | 2SK209 |
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メーカー | TOSHIBA |
カテゴリ | FET |
種別 | MOSFET,接合形FET |
データシート | ![]() |
Additional Feature | AVALANCHE RATED |
Case Connection | DRAIN |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 50 V |
Drain Current-Max (Abs) (ID) | 0.005 A |
Drain Current-Max (ID) | 0.005 A |
Drain-source On Resistance-Max | 0.028 ohm |
FET Technology | JUNCTION |
IDSS (Max)(mA) | 14 |
IDSS (Min)(mA) | 1.2 |
IG (Max)(mA) | 10 |
JEDEC-95 Code | TO-220AB |
JESD-30 Code | R-PDSO-G3 |
JESD-609 Code | e0 |
Moisture Sensitivity Level | 1 |
Number of Elements | 1 |
Number of Terminals | 2 |
Operating Mode | DEPLETION MODE |
Operating Temperature-Max | 125 Cel |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT Meter |
Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation Ambient-Max | 20 W |
Power Dissipation-Max (Abs) | 0.15 W |
Pulsed Drain Current-Max (IDM) | 8 A |
Qualification Status | Not Qualified |
Sub Category | FET General Purpose Power |
Surface Mount | NO |
Terminal Finish | TIN LEAD |
Terminal Form | GULL WING |
Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 10 |
Transistor Application | AMPLIFIER |
Transistor Element Material | SILICON |
Turn-off Time-Max (toff) | 75 ns |
Turn-on Time-Max (ton) | 55 ns |
VGDS (Max)(V) | -50 |
|Yfs| (Min)(mS) | 4 |
ピン数 | 3 |
極性 | N-ch |
面実装区分 | Y |
会社名称 | 株式会社東芝 |
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設立 | 1875年7月 |
資本金 | 4,399億円 |
所在地 | 東京都港区芝浦1-1-1 |
URL | http://www.semicon.toshiba.co.jp/eng/ |
2SK209 - TOSHIBA の商品詳細ページです。