MOSFET,接合形FET
型番 | 2SK118 |
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メーカー | TOSHIBA |
種別 | MOSFET,接合形FET |
データシート | ![]() |
Additional Feature | LOW NOISE |
Avalanche Energy Rating (Eas) | 2.1 mJ |
Case Connection | ISOLATED |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 60 V |
Drain Current-Max (Abs) (ID) | 10 A |
Drain Current-Max (ID) | 3 A |
Drain-source On Resistance-Max | 0.1 ohm |
FET Technology | JUNCTION |
JEDEC-95 Code | TO-220AB |
JESD-30 Code | R-PSFM-T3 |
JESD-609 Code | e0 |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | DEPLETION MODE |
Operating Temperature-Max | 125 Cel |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT Meter |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 0.1 W |
Pulsed Drain Current-Max (IDM) | 12 A |
Qualification Status | Not Qualified |
Sub Category | FET General Purpose Power |
Surface Mount | NO |
Terminal Finish | Tin/Lead (Sn/Pb) |
Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE |
Transistor Application | AMPLIFIER |
Transistor Element Material | SILICON |
会社名称 | 株式会社東芝 |
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設立 | 1875年7月 |
資本金 | 4,399億円 |
所在地 | 東京都港区芝浦1-1-1 |
URL | http://www.semicon.toshiba.co.jp/eng/ |
2SK118 - TOSHIBA の商品詳細ページです。