2SK112 データシート

Name: 2SK112
Brand: TOSHIBA
SKU: 400053618-0000-0000-0000

2SK112 - TOSHIBA の商品詳細ページです。

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2SK112 の詳細情報

型番	2SK112
メーカー	TOSHIBA
種別	MOSFET,接合形FET
データシート
Additional Feature	LOW NOISE
Case Connection	DRAIN
Configuration	SINGLE
DS Breakdown Voltage-Min	60 V
Drain Current-Max (Abs) (ID)	8 A
Drain Current-Max (ID)	8 A
Drain-source On Resistance-Max	0.03 ohm
FET Technology	JUNCTION
JEDEC-95 Code	TO-18
JESD-30 Code	O-MBCY-W3
JESD-609 Code	e0
Number of Elements	1
Number of Terminals	3
Operating Mode	DEPLETION MODE
Operating Temperature-Max	150 Cel
Package Body Material	METAL
Package Shape	RECTANGULAR
Package Style	CYLINDRICAL Meter
Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL
Power Dissipation Ambient-Max	125 W
Power Dissipation-Max (Abs)	0.25 W
Pulsed Drain Current-Max (IDM)	24 A
Qualification Status	Not Qualified
Sub Category	FET General Purpose Power
Surface Mount	NO
Terminal Finish	TIN BISMUTH
Terminal Form	THROUGH-HOLE
Terminal Position	BOTTOM
Time@Peak Reflow Temperature-Max (s)	10
Transistor Application	SWITCHING
Transistor Element Material	SILICON