2SC506 Toshiba

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2SC506 の詳細情報

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型番2SC506
メーカーTOSHIBA
種別トランジスタ
Additional Feature BUILT IN BIAS RESISTOR
Application AMPLIFIER
Case Connection COLLECTOR
Collector Current-Max (IC) 0.015 A
Collector Current-Max (IC) (A) 0.03
Collector-base Capacitance-Max 0.9 pF
Collector-base Capacitance-Max (pF) 0.9
Collector-emitter Voltage-Max 12 V
Collector-emitter Voltage-Max (V) 12
Configuration DARLINGTON
DC Current Gain-Min (hFE) 8
DLA Qualification Not Qualified
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JEDEC-95 Code TO-39
JESD-30 Code O-MBCY-W3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 125 Cel
Operating Temperature-Max (Cel) 125
Package Body Material METAL
Package Shape RECTANGULAR
Package Style CYLINDRICAL Meter
Peak Reflow Temperature (Cel) 240
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 0.1 W
Power Dissipation-Max (Abs) 0.1 W
Power Dissipation-Max (W) 1
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form FLAT
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 25 MHz
Transition Frequency-Nom (fT) (MHz) 7000
VCEsat-Max 1.5 V
会社名称株式会社東芝
設立1875年7月
資本金4,399億円
所在地東京都港区芝浦1-1-1
URLhttp://www.semicon.toshiba.co.jp/eng/

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