型番 | 2N4123 |
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メーカー | TOSHIBA |
データシート | ![]() |
Additional Feature | EUROPEAN PART NUMBER |
Collector Current-Max (IC) | 0.1 A |
Collector-base Capacitance-Max | 4 pF |
Collector-emitter Voltage-Max | 30 V |
Configuration | SINGLE |
DC Current Gain-Min (hFE) | 25 |
JEDEC-95 Code | TO-92 |
JESD-30 Code | O-PBCY-T3 |
JESD-609 Code | e0 |
Moisture Sensitivity Level | 1 |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Temperature-Max | 150 Cel |
Operating Temperature-Min | -65 Cel |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | CYLINDRICAL Meter |
Peak Reflow Temperature (Cel) | 225 |
Polarity/Channel Type | NPN |
Power Dissipation Ambient-Max | 0.625 W |
Power Dissipation-Max (Abs) | 0.35 W |
Qualification Status | Not Qualified |
Sub Category | Other Transistors |
Surface Mount | NO |
Terminal Finish | MATTE TIN |
Terminal Form | GULL WING |
Terminal Position | BOTTOM |
Time@Peak Reflow Temperature-Max (s) | 10 |
Transistor Application | AMPLIFIER |
Transistor Element Material | SILICON |
Transition Frequency-Nom (fT) | 250 MHz |
Turn-off Time-Max (toff) | 32 ns |
Turn-on Time-Max (ton) | 22 ns |
VCEsat-Max | 0.3 V |
会社名称 | 株式会社東芝 |
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設立 | 1875年7月 |
資本金 | 4,399億円 |
所在地 | 東京都港区芝浦1-1-1 |
URL | http://www.semicon.toshiba.co.jp/eng/ |
2N4123 - TOSHIBA の商品詳細ページです。