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1ZB330-Z の詳細情報

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  • メーカー情報
型番1ZB330-Z
メーカーTOSHIBA
データシートProduct_list_pdf
Breakdown Voltage-Max 350 V
Breakdown Voltage-Min 330 V
Breakdown Voltage-Nom 340 V
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
Dynamic Impedance-Max 5000 ohm
JEDEC-95 Code DO-41
JESD-30 Code O-PALF-W2
Non-rep Peak Rev Power Dis-Max 200 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 Cel
Operating Temperature-Min -40 Cel
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM Meter
Peak Reflow Temperature (Cel) 240
Polarity UNIDIRECTIONAL
Power Dissipation-Max 1 W
Qualification Status Not Qualified
Reference Voltage-Nom 340 V
Rep Pk Reverse Voltage-Max 306 V
Reverse Current-Max 10 uA
Reverse Test Voltage 306 V
Sub Category Voltage Reference Diodes
Surface Mount NO
Technology AVALANCHE
Terminal Form WIRE
Terminal Position AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Voltage Temp Coeff-Max 455 mV/Cel
Voltage Tol-Max 10 %
Working Test Current 0.5 mA
会社名称株式会社東芝
設立1875年7月
資本金4,399億円
所在地東京都港区芝浦1-1-1
URLhttp://www.semicon.toshiba.co.jp/eng/

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