| 型番 | 1G4B41 |
|---|---|
| メーカー | TOSHIBA |
| データシート | ![]() |
| Configuration | BRIDGE, 4 ELEMENTS |
| Diode Element Material | SILICON |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Forward Voltage-Max (VF) | 1.2 V |
| JESD-30 Code | R-PSIP-T4 |
| JESD-609 Code | e0 |
| Non-rep Pk Forward Current-Max | 55 A |
| Number of Elements | 4 |
| Number of Phases | 1 |
| Number of Terminals | 4 |
| Operating Temperature-Max | 150 Cel |
| Operating Temperature-Min | -40 Cel |
| Output Current-Max | 1 A |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | IN-LINE Meter |
| Qualification Status | Not Qualified |
| Rep Pk Reverse Voltage-Max | 400 V |
| Reverse Current-Max | 1.0E-5 uA |
| Sub Category | Bridge Rectifier Diodes |
| Surface Mount | NO |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| 会社名称 | 株式会社東芝 |
|---|---|
| 設立 | 1875年7月 |
| 資本金 | 4,399億円 |
| 所在地 | 東京都港区芝浦1-1-1 |
| URL | http://www.semicon.toshiba.co.jp/eng/ |
1G4B41 - TOSHIBA の商品詳細ページです。