TPIC5302D データシート Ti

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TPIC5302D の詳細情報

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型番TPIC5302D
メーカーTI
データシートProduct_list_pdf
Avalanche Energy Rating (Eas) 10.5 mJ
Case Connection ISOLATED
Configuration SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (Abs) (ID) 1.4 A
Drain Current-Max (ID) 1.4 A
Drain-source On Resistance-Max 0.35 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 40 pF
JEDEC-95 Code MS-012AC
JESD-30 Code R-PDSO-G16
Number of Elements 3
Number of Terminals 16
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 1.087 W
Power Dissipation-Max (Abs) 0.87 W
Pulsed Drain Current-Max (IDM) 7 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 84 ns
Turn-on Time-Max (ton) 56 ns
会社名称Texas Instruments Incorporated.
設立1930
資本金USD 816 million
所在地12500 TI Boulevard Dallas, Texas 75243 USA
URLhttp://www.ti.com/

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