TPIC5201KV データシート Ti

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TPIC5201KV の詳細情報

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型番TPIC5201KV
メーカーTI
データシートProduct_list_pdf
Avalanche Energy Rating (Eas) 120 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (Abs) (ID) 7.5 A
Drain Current-Max (ID) 0.75 A
Drain-source On Resistance-Max 0.125 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PZFM-T7
Number of Elements 2
Number of Terminals 7
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 15 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position ZIG-ZAG
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Texas Instruments Incorporated.
設立1930
資本金USD 816 million
所在地12500 TI Boulevard Dallas, Texas 75243 USA
URLhttp://www.ti.com/

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