TPIC2601KTC データシート Ti

TPIC2601KTC - TI の商品詳細ページです。

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TPIC2601KTC の詳細情報

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型番TPIC2601KTC
メーカーTI
データシートProduct_list_pdf
Additional Feature ESD PROTECTED
Avalanche Energy Rating (Eas) 105 mJ
Case Connection SOURCE
Configuration COMMON SOURCE, 6 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (Abs) (ID) 2 A
Drain Current-Max (ID) 2 A
Drain-source On Resistance-Max 0.3 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-G15
Number of Elements 6
Number of Terminals 15
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.7 W
Pulsed Drain Current-Max (IDM) 10 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Element Material SILICON
会社名称Texas Instruments Incorporated.
設立1930
資本金USD 816 million
所在地12500 TI Boulevard Dallas, Texas 75243 USA
URLhttp://www.ti.com/

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