TPIC2401KTA データシート Ti

TPIC2401KTA - TI の商品詳細ページです。

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TPIC2401KTA の詳細情報

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型番TPIC2401KTA
メーカーTI
データシートProduct_list_pdf
Additional Feature ESD PROTECTED
Avalanche Energy Rating (Eas) 36 mJ
Configuration COMPLEX
DS Breakdown Voltage-Min 60 V
Drain Current-Max (Abs) (ID) 1.5 A
Drain Current-Max (ID) 1.5 A
Drain-source On Resistance-Max 0.36 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G9
Number of Elements 4
Number of Terminals 9
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.7 W
Pulsed Drain Current-Max (IDM) 6 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Texas Instruments Incorporated.
設立1930
資本金USD 816 million
所在地12500 TI Boulevard Dallas, Texas 75243 USA
URLhttp://www.ti.com/

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