TPIC2322LD データシート Ti

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TPIC2322LD の詳細情報

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型番TPIC2322LD
メーカーTI
データシートProduct_list_pdf
Additional Feature LOGIC LEVEL COMPATIBLE
Case Connection ISOLATED
Configuration COMMON SOURCE, 3 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (Abs) (ID) 0.75 A
Drain Current-Max (ID) 0.75 A
Drain-source On Resistance-Max 0.7 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 40 pF
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
Number of Elements 3
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 0.95 W
Power Dissipation-Max (Abs) 0.95 W
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Texas Instruments Incorporated.
設立1930
資本金USD 816 million
所在地12500 TI Boulevard Dallas, Texas 75243 USA
URLhttp://www.ti.com/

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