TPIC1310KTS データシート Ti

TPIC1310KTS - TI の商品詳細ページです。

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TPIC1310KTS の詳細情報

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  • メーカー情報
型番TPIC1310KTS
メーカーTI
データシートProduct_list_pdf
Additional Feature ESD PROTECTED
Configuration COMPLEX
DS Breakdown Voltage-Min 30 V
Drain Current-Max (Abs) (ID) 3 A
Drain Current-Max (ID) 3 A
Drain-source On Resistance-Max 0.37 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T15
Number of Elements 6
Number of Terminals 15
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE Meter
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 13.9 W
Pulsed Drain Current-Max (IDM) 12 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Texas Instruments Incorporated.
設立1930
資本金USD 816 million
所在地12500 TI Boulevard Dallas, Texas 75243 USA
URLhttp://www.ti.com/

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