型番 | TPD4S009DRYR |
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メーカー | TI |
データシート | ![]() |
Additional Feature | LOW CAPACITANCE |
Breakdown Voltage-Min | 9 V |
Clamping Voltage-Max | 20 V |
Configuration | SINGLE |
Diode Element Material | SILICON |
Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
JEDEC-95 Code | MO-287UFAD |
JESD-30 Code | R-PBCC-N6 |
JESD-609 Code | e4 |
Moisture Sensitivity Level | 1 |
Non-rep Peak Rev Power Dis-Max | 25 W |
Number of Elements | 1 |
Number of Terminals | 6 |
Operating Temperature-Max | 85 Cel |
Operating Temperature-Min | -40 Cel |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | CHIP CARRIER Meter |
Polarity | UNIDIRECTIONAL |
Reference Standard | IEC-61000-4-2; IEC-61000-4-5 |
Rep Pk Reverse Voltage-Max | 5.5 V |
Reverse Current-Max | 0.1 uA |
Surface Mount | YES |
Technology | AVALANCHE |
Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
Terminal Form | NO LEAD |
Terminal Position | BOTTOM |
会社名称 | Texas Instruments Incorporated. |
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設立 | 1930 |
資本金 | USD 816 million |
所在地 | 12500 TI Boulevard Dallas, Texas 75243 USA |
URL | http://www.ti.com/ |
TPD4S009DRYR - TI の商品詳細ページです。