| 型番 | TPD4E1U06DCKR |
|---|---|
| メーカー | TI |
| Additional Feature | ULTRA LOW CAPACITANCE |
| Breakdown Voltage-Max | 8.5 V |
| Breakdown Voltage-Min | 6.5 V |
| Breakdown Voltage-Nom | 7.5 V |
| Clamping Voltage-Max | 11 V |
| Configuration | SINGLE |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| JESD-30 Code | R-PDSO-G6 |
| JESD-609 Code | e4 |
| Moisture Sensitivity Level | 1 |
| Non-rep Peak Rev Power Dis-Max | 45 W |
| Number of Elements | 1 |
| Number of Terminals | 6 |
| Operating Temperature-Max | 125 Cel |
| Operating Temperature-Min | -40 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE Meter |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity | UNIDIRECTIONAL |
| Reference Standard | IEC-61000-4-2, 4-4, 4-5 |
| Rep Pk Reverse Voltage-Max | 5.5 V |
| Reverse Current-Max | 0.01 uA |
| Sub Category | Transient Suppressors |
| Surface Mount | YES |
| Technology | AVALANCHE |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| 会社名称 | Texas Instruments Incorporated. |
|---|---|
| 設立 | 1930 |
| 資本金 | USD 816 million |
| 所在地 | 12500 TI Boulevard Dallas, Texas 75243 USA |
| URL | http://www.ti.com/ |
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