型番 | TPD4E1U06DCKR |
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メーカー | TI |
Additional Feature | ULTRA LOW CAPACITANCE |
Breakdown Voltage-Max | 8.5 V |
Breakdown Voltage-Min | 6.5 V |
Breakdown Voltage-Nom | 7.5 V |
Clamping Voltage-Max | 11 V |
Configuration | SINGLE |
Diode Element Material | SILICON |
Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 Code | R-PDSO-G6 |
JESD-609 Code | e4 |
Moisture Sensitivity Level | 1 |
Non-rep Peak Rev Power Dis-Max | 45 W |
Number of Elements | 1 |
Number of Terminals | 6 |
Operating Temperature-Max | 125 Cel |
Operating Temperature-Min | -40 Cel |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE Meter |
Peak Reflow Temperature (Cel) | 260 |
Polarity | UNIDIRECTIONAL |
Reference Standard | IEC-61000-4-2, 4-4, 4-5 |
Rep Pk Reverse Voltage-Max | 5.5 V |
Reverse Current-Max | 0.01 uA |
Sub Category | Transient Suppressors |
Surface Mount | YES |
Technology | AVALANCHE |
Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
Terminal Form | GULL WING |
Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
会社名称 | Texas Instruments Incorporated. |
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設立 | 1930 |
資本金 | USD 816 million |
所在地 | 12500 TI Boulevard Dallas, Texas 75243 USA |
URL | http://www.ti.com/ |
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