型番 | TPD4E02B04DQAR |
---|---|
メーカー | TI |
Breakdown Voltage-Max | 7.5 V |
Breakdown Voltage-Min | 5.5 V |
Breakdown Voltage-Nom | 6.4 V |
Clamping Voltage-Max | 6.6 V |
Configuration | COMPLEX |
Diode Element Material | SILICON |
Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 Code | R-PSSO-N10 |
JESD-609 Code | e4 |
Moisture Sensitivity Level | 1 |
Non-rep Peak Rev Power Dis-Max | 17 W |
Number of Elements | 4 |
Number of Terminals | 10 |
Operating Temperature-Max | 125 Cel |
Operating Temperature-Min | -40 Cel |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE Meter |
Polarity | BIDIRECTIONAL |
Reference Standard | IEC-61000-4-2, 4-4, 4-5 |
Rep Pk Reverse Voltage-Max | 3.6 V |
Reverse Current-Max | 0.01 uA |
Surface Mount | YES |
Technology | AVALANCHE |
Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
Terminal Form | NO LEAD |
Terminal Position | SINGLE |
会社名称 | Texas Instruments Incorporated. |
---|---|
設立 | 1930 |
資本金 | USD 816 million |
所在地 | 12500 TI Boulevard Dallas, Texas 75243 USA |
URL | http://www.ti.com/ |
TPD4E02B04DQAR - TI の商品詳細ページです。