TPD1E10B09DPYR

Name: TPD1E10B09DPYR
Brand: TI
SKU: 300391814-0000-0000-0000

TPD1E10B09DPYR - TI の商品詳細ページです。

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TPD1E10B09DPYR の詳細情報

型番	TPD1E10B09DPYR
メーカー	TI
Breakdown Voltage-Min	9.5 V
Breakdown Voltage-Nom	9.5 V
Clamping Voltage-Max	13 V
Configuration	SINGLE
Diode Element Material	SILICON
Diode Type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code	R-PBCC-N2
JESD-609 Code	e4
Moisture Sensitivity Level	1
Non-rep Peak Rev Power Dis-Max	90 W
Number of Elements	1
Number of Terminals	2
Operating Temperature-Max	125 Cel
Operating Temperature-Min	-40 Cel
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	CHIP CARRIER Meter
Peak Reflow Temperature (Cel)	260
Polarity	BIDIRECTIONAL
Power Dissipation-Max	0.162 W
Reference Standard	IEC-61000-4-2, 4-5
Rep Pk Reverse Voltage-Max	9 V
Reverse Current-Max	0.1 uA
Sub Category	Transient Suppressors
Surface Mount	YES
Technology	AVALANCHE
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal Form	NO LEAD
Terminal Position	BOTTOM
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED