TPD1E10B06DPYR Ti

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TPD1E10B06DPYR
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TPD1E10B06DPYR の詳細情報

  • 仕様・詳細
  • メーカー情報
型番TPD1E10B06DPYR
メーカーTI
Breakdown Voltage-Min 6 V
Breakdown Voltage-Nom 6 V
Clamping Voltage-Max 10 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PBCC-N2
JESD-609 Code e4
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 90 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 125 Cel
Operating Temperature-Min -40 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style CHIP CARRIER Meter
Peak Reflow Temperature (Cel) 260
Polarity BIDIRECTIONAL
Reference Standard IEC-61000-4-2, 4-5
Rep Pk Reverse Voltage-Max 5.5 V
Reverse Current-Max 0.1 uA
Sub Category Transient Suppressors
Surface Mount YES
Technology AVALANCHE
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
会社名称Texas Instruments Incorporated.
設立1930
資本金USD 816 million
所在地12500 TI Boulevard Dallas, Texas 75243 USA
URLhttp://www.ti.com/

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