SN65220DBV データシート Ti

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SN65220DBV の詳細情報

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型番SN65220DBV
メーカーTI
データシートProduct_list_pdf
Additional Feature LOW CAPACITANCE
Breakdown Voltage-Max 8 V
Breakdown Voltage-Min 6.5 V
Configuration COMPLEX
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code MO-178AB
JESD-30 Code R-PDSO-G6
JESD-609 Code e4
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 60 W
Number of Elements 2
Number of Terminals 6
Operating Temperature-Max 85 Cel
Operating Temperature-Min -40 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL
Power Dissipation-Max 0.385 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 6 V
Reverse Current-Max 1 uA
Surface Mount YES
Technology AVALANCHE
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
会社名称Texas Instruments Incorporated.
設立1930
資本金USD 816 million
所在地12500 TI Boulevard Dallas, Texas 75243 USA
URLhttp://www.ti.com/

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