CSD88537ND Ti

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CSD88537ND
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CSD88537ND の詳細情報

  • 仕様・詳細
  • メーカー情報
型番CSD88537ND
メーカーTI
Additional Feature AVALANCHE RATED
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.019 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5.2 pF
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e4
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Operating Temperature-Min -55 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.1 W
Pulsed Drain Current-Max (IDM) 62 A
Surface Mount YES
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Texas Instruments Incorporated.
設立1930
資本金USD 816 million
所在地12500 TI Boulevard Dallas, Texas 75243 USA
URLhttp://www.ti.com/

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