型番 | CSD88537ND |
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メーカー | TI |
Additional Feature | AVALANCHE RATED |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 60 V |
Drain Current-Max (ID) | 8 A |
Drain-source On Resistance-Max | 0.019 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 5.2 pF |
JEDEC-95 Code | MS-012AA |
JESD-30 Code | R-PDSO-G8 |
JESD-609 Code | e4 |
Moisture Sensitivity Level | 1 |
Number of Elements | 2 |
Number of Terminals | 8 |
Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 Cel |
Operating Temperature-Min | -55 Cel |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE Meter |
Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 2.1 W |
Pulsed Drain Current-Max (IDM) | 62 A |
Surface Mount | YES |
Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
Terminal Form | GULL WING |
Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
会社名称 | Texas Instruments Incorporated. |
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設立 | 1930 |
資本金 | USD 816 million |
所在地 | 12500 TI Boulevard Dallas, Texas 75243 USA |
URL | http://www.ti.com/ |
CSD88537ND - TI の商品詳細ページです。