CSD86311W1723 データシート

Name: CSD86311W1723
Brand: TI
SKU: 130402699-0000-0000-0000

CSD86311W1723 - TI の商品詳細ページです。

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CSD86311W1723 の詳細情報

型番	CSD86311W1723
メーカー	TI
カテゴリ	MOSFET
データシート
Configuration	COMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min	25 V
Description	デュアル N チャネル NexFET™ パワー MOSFET
Drain Current-Max (Abs) (ID)	4.5 A
Drain Current-Max (ID)	4.5 A
Drain-source On Resistance-Max	0.051 ohm
FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	13 pF
ID, Continuous Drain Current at Ta=25degC(A)
ID, Silicon limited at Tc=25degC(A)	4.5
IDM, Max Pulsed Drain Current(Max)(A)	4.5
JESD-30 Code	R-XBGA-B12
JESD-609 Code	e1
Logic Level	Yes
Moisture Sensitivity Level	1
Number of Elements	2
Number of Terminals	12
Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 Cel
Operating Temperature-Min	-55 Cel
Package	WLP1.7x2.3
Package Body Material	UNSPECIFIED
Package Shape	RECTANGULAR
Package Style	GRID ARRAY Meter
Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL
Power Dissipation Ambient-Max	1.5 W
Power Dissipation-Max (Abs)	1.5 W
Pulsed Drain Current-Max (IDM)	4.5 A
QG Typ(nC)	3.1
Qualification Status	Not Qualified
Rds(on) Max at VGS=10V(mOhms)
Rds(on) Max at VGS=4.5V(mOhms)	42
Status	ACTIVE
Sub Category	FET General Purpose Power
Surface Mount	YES
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form	BALL
Terminal Position	BOTTOM
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Transistor Application	SWITCHING
Transistor Element Material	SILICON
VDS(V)	25