CSD75211W1723 データシート Ti

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CSD75211W1723 の詳細情報

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型番CSD75211W1723
メーカーTI
データシートProduct_list_pdf
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (Abs) (ID) 4.5 A
Drain Current-Max (ID) 4.5 A
Drain-source On Resistance-Max 0.07 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PBGA-B12
JESD-609 Code e1
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 12
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style GRID ARRAY Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.5 W
Pulsed Drain Current-Max (IDM) 4.5 A
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form BALL
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Texas Instruments Incorporated.
設立1930
資本金USD 816 million
所在地12500 TI Boulevard Dallas, Texas 75243 USA
URLhttp://www.ti.com/

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