型番 | CSD25402Q3A |
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メーカー | TI |
カテゴリ | MOSFET |
Case Connection | SOURCE |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 20 V |
Description | P チャネル NexFET パワー MOSFET、CSD25402Q3A |
Drain Current-Max (Abs) (ID) | 15 A |
Drain Current-Max (ID) | 15 A |
Drain-source On Resistance-Max | 0.0159 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 51 pF |
Id peak(Max)(A) | -82 |
JESD-30 Code | R-PDSO-F5 |
JESD-609 Code | e3 |
Logic Level | Yes |
Moisture Sensitivity Level | 1 |
Number of Elements | 1 |
Number of Terminals | 5 |
Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 Cel |
Operating Temperature-Min | -55 Cel |
Package | SON3x3 |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE Meter |
Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | P-CHANNEL |
Power Dissipation-Max (Abs) | 2.8 W |
Pulsed Drain Current-Max (IDM) | 148 A |
QG Typ(nC) | 7.5 |
QGD Typ(nC) | 1.1 |
QGS Typ(nC) | 2.4 |
Rds(on) Max at VGS=1.8V(mOhms) | 300 |
Rds(on) Max at VGS=2.5V(mOhms) | 15.9 |
Rds(on) Max at VGS=4.5V(mOhms) | 8.9 |
Status | ACTIVE |
Sub Category | Other Transistors |
Surface Mount | YES |
Terminal Finish | Matte Tin (Sn) |
Terminal Form | FLAT |
Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
VDS(V) | -20 |
VGS(V) | -12 |
VGSTH Typ(V) | -0.9 |
会社名称 | Texas Instruments Incorporated. |
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設立 | 1930 |
資本金 | USD 816 million |
所在地 | 12500 TI Boulevard Dallas, Texas 75243 USA |
URL | http://www.ti.com/ |
CSD25402Q3A - TI の商品詳細ページです。