CSD25402Q3A Ti

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CSD25402Q3A
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CSD25402Q3A の詳細情報

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  • メーカー情報
型番CSD25402Q3A
メーカーTI
カテゴリMOSFET
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 20 V
Description P チャネル NexFET パワー MOSFET、CSD25402Q3A
Drain Current-Max (Abs) (ID) 15 A
Drain Current-Max (ID) 15 A
Drain-source On Resistance-Max 0.0159 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 51 pF
Id peak(Max)(A) -82
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Logic Level Yes
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Operating Temperature-Min -55 Cel
Package SON3x3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2.8 W
Pulsed Drain Current-Max (IDM) 148 A
QG Typ(nC) 7.5
QGD Typ(nC) 1.1
QGS Typ(nC) 2.4
Rds(on) Max at VGS=1.8V(mOhms) 300
Rds(on) Max at VGS=2.5V(mOhms) 15.9
Rds(on) Max at VGS=4.5V(mOhms) 8.9
Status ACTIVE
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
VDS(V) -20
VGS(V) -12
VGSTH Typ(V) -0.9
会社名称Texas Instruments Incorporated.
設立1930
資本金USD 816 million
所在地12500 TI Boulevard Dallas, Texas 75243 USA
URLhttp://www.ti.com/

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